Physical models for bipolar device simulation and their effects on cutoff frequency

Author

Shigyo, N. ; Niitsu, Yoshihiro

Author_Institution

Toshiba Corp., Kawasaki

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2087

Lastpage

2089

Abstract

The effects of individual physical models on the bipolar AC characteristic, i.e., the cutoff frequency f_T, have been investigated. It has been found that the model for the intrinsic carrier concentration has a negligible effect on the f_T-I_C characteristics. The effects of the carrier mobility and the apparent bandgap narrowing on f_T are found to be different for a bipolar transistor device structure. A sufficient agreement between the simulation and measurement of the f_T-I_C characteristics has been obtained using the proposed physical models

Keywords

bipolar transistors; carrier density; carrier mobility; energy gap; semiconductor device models; solid-state microwave devices; AC characteristic; apparent bandgap narrowing; bipolar device simulation; bipolar transistor device structure; carrier mobility; cutoff frequency; frequency current characteristics; intrinsic carrier concentration; physical models; Analytical models; Computational modeling; Current measurement; Cutoff frequency; Photonic band gap; Physics; Semiconductor devices; Semiconductor impurities; Silicon carbide; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239845

Filename

239845