Title :
Physical models for bipolar device simulation and their effects on cutoff frequency
Author :
Shigyo, N. ; Niitsu, Yoshihiro
Author_Institution :
Toshiba Corp., Kawasaki
fDate :
11/1/1993 12:00:00 AM
Abstract :
The effects of individual physical models on the bipolar AC characteristic, i.e., the cutoff frequency fT, have been investigated. It has been found that the model for the intrinsic carrier concentration has a negligible effect on the fT -IC characteristics. The effects of the carrier mobility and the apparent bandgap narrowing on fT are found to be different for a bipolar transistor device structure. A sufficient agreement between the simulation and measurement of the fT-IC characteristics has been obtained using the proposed physical models
Keywords :
bipolar transistors; carrier density; carrier mobility; energy gap; semiconductor device models; solid-state microwave devices; AC characteristic; apparent bandgap narrowing; bipolar device simulation; bipolar transistor device structure; carrier mobility; cutoff frequency; frequency current characteristics; intrinsic carrier concentration; physical models; Analytical models; Computational modeling; Current measurement; Cutoff frequency; Photonic band gap; Physics; Semiconductor devices; Semiconductor impurities; Silicon carbide; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
