A hybrid silicon carbide differential amplifier for 350°C operation

Author

Tomana, Miro ; Johnson, R. Wayne ; Jaeger, Richard C. ; Dillard, William C.

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

Volume

16

Issue

5

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

536

Lastpage

542

Abstract

An operational amplifier has been designed, fabricated, and tested at 350°C using silicon carbide MESFET pairs and thick-film hybrid technology. The amplifier was successfully tested over the temperature range of 25-350°C. The gain of the amplifier was greater than 60 dB, the common-mode rejection ratio was greater than 55 dB, and the offset voltage varied from 139 to 159 mV over the entire temperature range. The results demonstrate the feasibility of high-temperature circuit design and assembly using this approach

Keywords

Schottky gate field effect transistors; differential amplifiers; hybrid integrated circuits; linear integrated circuits; operational amplifiers; silicon compounds; thick film circuits; 139 to 159 mV; 25 to 350 degC; 60 dB; CMRR; MESFET pairs; SiC; common-mode rejection ratio; differential amplifier; high-temperature circuit design; offset voltage; operational amplifier; thick-film hybrid technology; Differential amplifiers; MESFETs; Operational amplifiers; Photonic band gap; Silicon carbide; Space technology; Temperature distribution; Testing; Thermal conductivity; Thick films;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.239885

Filename

239885