Title :
Amorphous-silicon integrated circuit
Author :
Matsumura, Masakiyo ; Hayama, Hiroshi
Author_Institution :
Tokyo Institute of Technology, Tokyo, Japan
Abstract :
a-Si thin film FET´s with low-temperature low-pressure chemical vapor deposition (CVD) SiO2as the gate insulator were fabricated and they showed on-off current ratios of about 105. An inverter was made with these a-Si FET´s on a glass substrate for the first time.
Keywords :
Amorphous silicon; Breakdown voltage; Chemical vapor deposition; Electric breakdown; Glass; Insulation; Inverters; Power electronics; Substrates; Testing;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1980.11863
