Title :
Time-domain model of the device/circuit characteristics of a TRAPPAT-plasma mode avalanche-diode oscillator
Author_Institution :
Bell-Northern Research, Ottawa, Canada
Abstract :
A simple computer model of a TRAPATT diode is described. This model is then interfaced with a time-domain representation of a stepped-impedance coaxial circuit, and a bias voltage is applied. Oscillations are then allowed to build up as dictated by the diode-circuit combination, and the performance of a given diode in a particular circuit may be evaluated.
Keywords :
avalanche diodes; microwave oscillators; semiconductor device models; time-domain analysis; transit time devices; TRAPATT; avalanche diode oscillators; microwave oscillator; semiconductor device models; time domain model; transit time diodes; trapped plasma mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710232
