Title :
Fringing Field Effect in MOS Devices
Author :
Pattanayak, Deva N. ; Poksheva, John G. ; Downing, Robert W. ; Akers, Lex A.
Author_Institution :
Rockwell International, Anaheim, CA, USA
fDate :
3/1/1982 12:00:00 AM
Abstract :
Fringing field action in metal-oxide-semiconductor (MOS) devices is discussed theoretically. Line capacitance coefficients on silicon-on-sapphire (SOS) and bulk configurations are determined from a three-dimensional model. Increase of threshold voltage of narrow-width devices due to fringing is described.
Keywords :
MOS devices; Silicon-on-insulator devices; Conductors; Dielectric constant; Geometry; Helium; Integral equations; Integrated circuit interconnections; MOS devices; Parasitic capacitance; Threshold voltage; Very large scale integration;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCHMT.1982.1135931
