Title :
Mechanism of kink effect related to negative photoconductivity in AlGaAs/GaAs HEMTs
Author :
Thomasian, A. ; Saunders, N.L. ; Hipwood, L.G. ; Rezazadeh, A.A.
Author_Institution :
GEC Hirst Res. Centre, Wembley, UK
fDate :
5/25/1989 12:00:00 AM
Abstract :
The observation and proposed mechanism for negative photoconductivity leading to the kink effect in the output DC characteristics of AlGaAs/GaAs HEMTs is reported. Negative photoconductivity is the result of trapping electrons at the surface, and the kink is attributed to the tunnelling of these trapped electrons back into the n-AlGaAs layer, at a constant gate-to-drain bias.
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; high electron mobility transistors; photoconductivity; tunnelling; 2 DEG peak field; AlGaAs-GaAs; HEMTs; III-V semiconductors; constant gate-to-drain bias; depletion-mode devices; drain current increase; electron trapping; kink effect; n + laser; negative photoconductivity; output DC characteristics; tunnelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890499
