• DocumentCode
    962985
  • Title

    Three-level transferred-electron effects in InP

  • Author

    Rees, H.D. ; Hilsum, C.

  • Author_Institution
    Royal Radar Establisment, Great Malvern, UK
  • Volume
    7
  • Issue
    15
  • fYear
    1971
  • Firstpage
    437
  • Lastpage
    438
  • Abstract
    Revised estimates of the velocity/field characteristic of InP are made in the light of recent experimental evidence. A limiting oscillator efficiency of about 30% is predicted.
  • Keywords
    band structure; electron mobility; indium compounds; semiconductor materials; InP; band structure; electron mobility; limiting oscillator efficiency; semiconductor material; three level transferred electron effects; velocity/field characteristic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710294
  • Filename
    4244898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=962985