• DocumentCode
    963070
  • Title

    22 GHz-bandwidth 1.5 mu m compressively strained InGaAsP MQW ridge-waveguide DFB lasers

  • Author

    Smith, A.D. ; Baulcomb, R.S. ; Warbrick, K.J.

  • Volume
    29
  • Issue
    21
  • fYear
    1993
  • Firstpage
    1848
  • Lastpage
    1849
  • Abstract
    A DFB laser with a modulation bandwidth of 22 GHz together with a sidemode suppression in excess of 50 dB is reported. The wide bandwidth is achieved by using a doped SCH region which is sufficiently thick to accommodate a DFB grating, and a ridge-waveguide structure with patterned p-side metallisation to give very low parasitic capacitance. A differential gain of 25*10-16 cm2 is reported for the doped strained MQW structure used.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; semiconductor quantum wells; 1.5 micron; 22 GHz; InGaAsP; MQW ridge-waveguide DFB lasers; compressively strained; doped SCH region; modulation bandwidth; parasitic capacitance; patterned p-side metallisation; sidemode suppression;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931230
  • Filename
    241376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963070