High-reflectance GaInP/GaAs distributed Bragg reflector

Author

Saint-Cricq, B. ; Rudra, Atri ; Ganiere, J.D. ; Ilegems, M.

Author_Institution

Inst. for Micro & Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland

Volume

29

Issue

21

fYear

1993

Firstpage

1854

Lastpage

1855

Abstract

A high-reflectance GaInP/GaAs distributed Bragg reflector (DBR) was grown by chemical beam epitaxy (CBE). The mirror consists of 40 pairs of alternating layers and was designed for a centre wavelength of 980 nm, resulting in a total thickness of 5.8 mu m. Highly stable growth conditions led to a maximum reflectance of 0.99 and to a variation in the centre wavelength of only 5 nm over the 2" (50.8 mm) wafer. Transmission electron microscopy and X-ray diffraction measurements confirmed the vertical uniformity and the crystallographic quality of the sample.

Keywords

III-V semiconductors; X-ray diffraction examination of materials; chemical beam epitaxial growth; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; transmission electron microscope examination of materials; 5.8 micron; 980 nm; GaInP-GaAs; TEM; X-ray diffraction measurements; centre wavelength; chemical beam epitaxy; crystallographic quality; distributed Bragg reflector; stable growth conditions; vertical uniformity;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19931234

Filename

241380