• DocumentCode
    963211
  • Title

    Lateral capacitive probing of an anode-loaded epitaxial coplanar gallium-arsenide diode

  • Author

    Boccon-Gibod, D. ; Teszner, J.L.

  • Author_Institution
    Laboratoires d´Ã\x89lectronique et de Physique Appliquée, Limeil Brévannes, France
  • Volume
    7
  • Issue
    16
  • fYear
    1971
  • Firstpage
    469
  • Lastpage
    472
  • Abstract
    Lateral capacitive probing of epitaxial coplanar diodes shows that the results described in a previous letter are related to the creation of a moving high-field region from the cathode. When this region reaches the anode, no other moving space-charge region appears at the cathode, which should imply the existence of a stationary high-field region at the anode.
  • Keywords
    domains; epitaxial growth; probes; semiconductor diodes; 12.4 GHz; GaAs; domains; epitaxial coplanar diodes; high field region; impedance; lateral capacitive probing; sampling oscilloscope; semiconductor diodes; space charge distribution;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710317
  • Filename
    4244922
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963211