• DocumentCode
    963403
  • Title

    Impact ionisation in high-output-conductance region of 0.5 mu m AlSb/InAs HEMTs

  • Author

    Boos, J. Brad ; Shanabrook, B.V. ; Park, DaeLim ; Davis, J. Lynn ; Dietrich, H.B. ; Kruppa, W.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    29
  • Issue
    21
  • fYear
    1993
  • Firstpage
    1888
  • Lastpage
    1890
  • Abstract
    DC and RF measurements on AlSb/InAs HEMTs biased in the commonly observed high output conductance region are reported. In this region, high gate current, inductive output impedance and increased noise were observed resulting from impact ionisation. Devices with a 0.5 mu m gate length exhibited a maximum fT and fmax of 25 and 40 GHz, respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device noise; solid-state microwave devices; 0.5 micron; 25 GHz; 40 GHz; AlSb-InAs; DC measurements; HEMTs; RF measurements; high gate current; high-output-conductance region; impact ionisation; inductive output impedance; noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931257
  • Filename
    241403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963403