Title :
Room-temperature continuous wave vertical surface-emitting GaAs injection lasers grown by molecular-beam epitaxy
Author :
Tai, K. ; Seabury, C.W. ; Ota, Yoshiharu ; Deppe, Dennis G. ; Cho, Andrew Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
Summary form only given, as follows. Room-temperature continuous-wave oscillation with emission power in excess of 1 mW was achieved in vertical-cavity surface-emitting lasers containing a 0.5- mu m-thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a metal-DBR hybrid reflector grown by MBE. The threshold current is 50 mA for a 15- mu m-diameter device. Th temperature dependence of the threshold current gives T0=115 K.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; molecular beam epitaxial growth; semiconductor junction lasers; semiconductor technology; 0.5 micron; 1 mW; 15 micron; 50 mA; CW operation; GaAs injection lasers; MBE; continuous-wave oscillation; distributed Bragg reflector; emission power; metal-DBR hybrid reflector; molecular-beam epitaxy; room temperature operation; semiconductors; temperature dependence; threshold current; vertical-cavity surface-emitting lasers; Distributed Bragg reflectors; Electrodes; Gallium arsenide; Indium gallium arsenide; Josephson junctions; Molecular beam epitaxial growth; Niobium; Power lasers; SQUIDs; Superconducting epitaxial layers; Surface emitting lasers; Surface waves; Temperature dependence; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
