DocumentCode
963871
Title
New anatomies for semiconductor wafers
Author
Fan, John C C
Author_Institution
Kopin Corp., Taunton, MA, USA
Volume
26
Issue
4
fYear
1989
fDate
4/1/1989 12:00:00 AM
Firstpage
34
Lastpage
38
Abstract
The mixing and matching of semiconductor materials to produce specific performance characteristics is discussed. Instances are GaAs-on-Si and Si-on-insulator wafers, and wafers that layer various III-V and II-VI materials. The techniques, collectively named wafer engineering make it possible to grow ultrathin freestanding wafers. The discussion focuses on GaAs-on-Si and Si-on-insulator, which have the most immediate commercial potential. Cleft layers, obtained by a technique called lateral overgrowth, and other advanced approaches to engineering materials with specified properties, are examined.<>
Keywords
semiconductor growth; semiconductor technology; GaAs-Si; II-VI; III-V; lateral overgrowth; semiconductor materials; semiconductor wafers; wafer engineering; Anatomy; Atomic layer deposition; Crystalline materials; Crystallization; Gallium arsenide; Lattices; Optical materials; Semiconductor materials; Silicon; Substrates;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/6.24152
Filename
24152
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