• DocumentCode
    963933
  • Title

    Gunn effects in InxGa1¿xSb (0 ¿ x ¿ 0.16)

  • Author

    Hojo, A. ; Kuru, I.

  • Author_Institution
    Toshiba Corporation, Electron Device Laboratory, Toshiba Research and Development Center, Kawasaki, Japan
  • Volume
    10
  • Issue
    6
  • fYear
    1974
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    Gunn effects in InxGa1¿xSb (0 ¿ x ¿ 0.16) have been observed. To observe the Gunn effect, a condition nL/n¿ ¿ 0.1 or, equivalently, ¿EL¿ ¿ 6.4kT should be satisfied in the crystals. The threshold fields for the Gunn effect in the crystals were in the range of 0.6¿1.0 kV/cm.
  • Keywords
    Gunn effect; III-V semiconductors; band structure; indium antimonide; negative resistance; Gunn effects; III-V semiconductors; InxGa1-xSb; band structure; indium antimonide; negative resistance; threshold fields;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740047
  • Filename
    4245002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963933