• DocumentCode
    964103
  • Title

    Generation/recombination of carriers in p-n junctions

  • Author

    Morgan, D.V. ; Ashburn, P.

  • Author_Institution
    University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
  • Volume
    10
  • Issue
    7
  • fYear
    1974
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    In the letter, we present theoretical I/V characteristics of silicon diodes. Generation/recombination is included, and the variation of the I/V characteristics with trap density Ntt is noted. The differences between uniform and nonuniform distributions of recombination centres are discussed, and a comparison is made with previously published experimental results.
  • Keywords
    electron-hole recombination; p-n homojunctions; semiconductor diodes; I/V characteristics; electron hole recombinations; p-n homojunctions; p-n junctions; semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740066
  • Filename
    4245022
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=964103