Title :
High-efficiency proton-isolated GaAs IMPATT diodes
Author :
Speight, J.D. ; Leigh, P. ; McIntyre, N. ; Groves, I.G. ; O´Hara, S. ; Hemment, P.
Author_Institution :
Post Office, Research Station, London, UK
Abstract :
The fabrication and c.w. operation of planar proton-isolated diffused junction and Schottky-barrier GaAs IMPATT diodes are described. The diodes have shown a maximum efficiency of 13.5% and output power of 315 mW in the Q band. Planar diodes appear to be superior to mesa devices formed from identical material.
Keywords :
III-V semiconductors; IMPATT diodes; Schottky-barrier diodes; gallium arsenide; semiconductor device manufacture; solid-state microwave devices; 315 milliwatt; IMPATT diodes; Q-band; Schottky barrier diodes; fabrication; gallium arsenide; proton isolated diffused junction; semiconductor device manufacture; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740076
