Title :
Sub-terahertz testing of silicon MOSFET
Author :
Stillman, W. ; Veksler, Dekel ; Elkhatib, T.A. ; Salama, Khaled ; Guarin, Fernando ; Shur, Michael S.
Author_Institution :
Dept. of ECSE, Rensselaer Polytech. Inst., Troy, NY
Abstract :
The difference in the terahertz response of Si MOSFETs with identical above threshold characteristics but different values of the leakage current in the below threshold regime is demonstrated. The results show that the terahertz response test can be used as a complementary testing technique of a Si MOS VLSI under bias.
Keywords :
MOSFET; elemental semiconductors; leakage currents; silicon; submillimetre waves; Si; leakage current; silicon MOSFET; subterahertz testing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20089418
