Determination of device structure from GaAs/AlGaAs HEMT DC I -V characteristic curves

Author

Mahon, Simon J. ; Skellern, David J.

Author_Institution

Macquarie Univ., Sydney, NSW, Australia

Volume

39

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1041

Lastpage

1049

Abstract

A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from the DC I-V characteristic is described. The procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, spacer layer thickness, physical gate length, source resistance, drain resistance, and the saturated electron velocity, in the 2DEG and in the doped AlGaAs to be obtained. The accuracy of the inverse modeling procedure is established by comparison of the derived HEMT structure with experimental results

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; Al fraction; GaAs-AlGaAs; HEMT; HEMT structure; I-V characteristic; device structure determination; dopant density; doped layer thickness; drain resistance; experimental results; inverse modeling; models; physical gate length; saturated electron velocity; semiconductors; source resistance; spacer layer thickness; Aluminum; Circuits; Electrical resistance measurement; Electrons; Gallium arsenide; HEMTs; Inverse problems; Length measurement; Numerical analysis; Velocity measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.129080

Filename

129080