DocumentCode
9655
Title
Electrical and Reliability Characteristics of High- 
-InGaZnO Thin-Film Transistors
Author
Tung-Ming Pan ; Ching-Hung Chen ; Jiang-Hung Liu ; Jim-Long Her ; Koyama, Koichi
Author_Institution
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Volume
35
Issue
1
fYear
2014
fDate
Jan. 2014
Firstpage
66
Lastpage
68
Abstract
In this letter, we investigated the electrical and reliability characteristics of high- κ HoTiO3 amorphous indium-gallium-zinc oxide ( α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO3 dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm2/Vs, a small subthreshold swing of 160 mV/decade, and a high ION/IOFF current ratio of 1.3 ×108. These results are attributed to the incorporation of TiOx into the Ho2O3 film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO3 α-IGZO TFT was studied under both positive and negative bias stress conditions.
Keywords
II-VI semiconductors; amorphous semiconductors; gallium compounds; high-k dielectric thin films; holmium compounds; indium compounds; semiconductor device reliability; surface roughness; thin film transistors; vacancies (crystal); wide band gap semiconductors; zinc compounds; α-IGZO TFT device; HoTiO3-InGaZnO; amorphous indium-gallium-zinc oxide TFT devices; electrical characteristics; field-effect mobility; high-κ thin-film transistors; negative bias stress conditions; oxygen vacancies; positive bias stress conditions; reliability characteristics; surface roughness; threshold voltage stability; Dielectrics; Hafnium compounds; Logic gates; Stress; Thin film transistors; Threshold voltage; ${rm HoTiO}_{3}$ $alpha$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2287349
Filename
6678542
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