DocumentCode
9657
Title
A 1.5 mW 68 dB SNDR 80 Ms/s 2
Interleaved Pipelined SAR ADC in 28 nm CMOS
Author
van der Goes, Frank ; Ward, Christopher M. ; Astgimath, Santosh ; Han Yan ; Riley, Jeff ; Zeng Zeng ; Mulder, John ; Sijia Wang ; Bult, Klaas
Author_Institution
Broadcom Netherlands, Bunnik, Netherlands
Volume
49
Issue
12
fYear
2014
fDate
Dec. 2014
Firstpage
2835
Lastpage
2845
Abstract
This paper presents a power-efficient 80 MS/s, 11 bit ENOB ADC. It is realized in 28 nm CMOS and is based on two interleaved pipelined SAR ADCs. It includes an on-chip reference generator and does not require any external components. The total power dissipation is 1.5 mW, resulting in a low-frequency Walden FOM of 9.1 fJ/conv-step and a low-frequency Schreier FOM of 172.2 dB, which is the largest FOM reported to date for sampling frequencies larger than 1 MS/s. The key aspects in achieving this excellent power efficiency include the choice of ADC architecture, integrator-based amplifiers used for noise filtering, the finite settling of the reference voltage during the SAR conversion, and the modified DAC switching scheme to reduce the DAC switching energy.
Keywords
CMOS integrated circuits; amplifiers; analogue-digital conversion; digital-analogue conversion; CMOS integrated circuit; DAC switching energy; SAR conversion; finite settling; integrator-based amplifiers; interleaved pipelined SAR ADC; low-frequency Schreier FOM; low-frequency Walden FOM; modified DAC switching; noise filtering; on-chip reference generator; power 1.5 mW; power dissipation; power-efficient ENOB ADC; reference voltage; sampling frequency; size 28 nm; word length 11 bit; Bandwidth; Capacitors; Gain; Noise; Redundancy; Switches; Transistors; ADC; CMOS; SAR; analog-digital conversion; background calibration; pipelined; residue amplifier; successive approximation; switched capacitor;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2014.2361774
Filename
6935025
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