• DocumentCode
    965892
  • Title

    Approximations to Fermi-Dirac integrals and their use in device analysis

  • Author

    Selvakumar, C.R.

  • Author_Institution
    Indian Institute of Technology, Madras, India
  • Volume
    70
  • Issue
    5
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    516
  • Lastpage
    518
  • Abstract
    A simple,single-expression approximation is derived for the Fermi-Dirac (F-D) Integral F1/2(x) in the range -4 ≤ x ≤ +12. This approximation is more accurate (less than 1-percent error throughout) and more useful in device analysis and computer modeling. The approximation procedure is general and can be used to find approximations for F-D Integrals of any order and to any arbitrary degree of accuracy.
  • Keywords
    Charge carrier density; Chromium; Diffusion processes; Electron devices; Equations; Instruments; Notice of Violation; Numerical analysis; Semiconductor devices; Semiconductor impurities;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1982.12337
  • Filename
    1456605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=965892