Title :
1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs
Author :
Syrbu, A. ; Mircea, A. ; Mereuta, A. ; Caliman, A. ; Berseth, C.-A. ; Suruceanu, G. ; Iakovlev, V. ; Achtenhagen, M. ; Rudra, A. ; Kapon, E.
Author_Institution :
BeamExpress S.A., Lausanne, Switzerland
fDate :
5/1/2004 12:00:00 AM
Abstract :
We demonstrate 1.5-μm waveband wafer-fused InGaAlAs-InP-AlGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting high single-mode power of 1.5 mW at room temperature with sidemode suppression ratio of over 30 dB and a full-width at half-maximum far field angle of 9/spl deg/. These devices have thermal resistance value below 1.5 K/mW and are emitting 0.2 mW at 70/spl deg/C. VCSELs with a wavelength span of 40-nm emission are produced from the same active cavity material, which shows the potential of realizing multiple-wavelength VCSEL arrays.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; semiconductor lasers; surface emitting lasers; thermal conductivity; wafer bonding; 0.2 mW; 1.5 mW; 1.5 mum; 1550 nm; 20 degC; 70 degC; InGaAlAs-InP-AlGaAs-GaAs; InGaAlAs-InP-AlGaAs-GaAs VCSEL; multiple-wavelength VCSEL arrays; room temperature; semiconductor lasers; sidemode suppression ratio; single-mode operation; thermal resistance; wafer bonding; wafer-fused vertical cavity surface emitting lasers; Distributed Bragg reflectors; Etching; Gallium arsenide; Laser fusion; Power generation; Surface emitting lasers; Surface resistance; Temperature; Thermal resistance; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.826099
