Title :
Properties of Hafnium Dioxide Thin-Film Capacitors
Author :
Huber, F. ; Huber, Franz
Author_Institution :
Bell Labs,Pa
fDate :
12/1/1971 12:00:00 AM
Abstract :
Dielectric films of anodically formed HfO2based on Hf films of different degrees of orientation as well as reactively sputtered HfO2films were studied. The anodic oxide grown on oriented Hf films and the reactively sputtered HfO2films were monoclinic and showed partial orientation with the
Keywords :
Atmosphere; Capacitors; Dielectric films; Dielectric thin films; Etching; Hafnium oxide; Resistors; Sputtering; Substrates; Transistors;
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
DOI :
10.1109/TPHP.1971.1136425
