A monolithic 75-110 GHz balanced InP-based HEMT amplifier

Author

Wang, Huei ; Lai, Richard ; Chen, Sian Tek ; Berenz, John

Author_Institution

Electron. Technol. Div., Redondo Beach, CA, USA

Volume

3

Issue

10

fYear

1993

Firstpage

381

Lastpage

383

Abstract

A monolithic microwave integrated circuit (MMIC) balanced amplifier covering the entire W-band (75-110 GHz) has been developed using 0.1-mm pseudomorphic InAlAs-InGaAs-InP HEMT technology. This MMIC amplifier demonstrated first pass success with a measured gain of 23+or-3 dB and good return loss from 75 to 110 GHz. The noise figure of this amplifier is about 6 dB around 94 GHz. This is believed to be the best reported broadband and high-gain performance of monolithic amplifiers covering the entire W-band.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; 0.1 micron; 23 dB; 6 dB; 75 to 110 GHz; EHF; HEMT technology; InAlAs-InGaAs-InP; MM-wave type; MMIC; W-band; balanced amplifier; millimetre-wave type; monolithic amplifiers; monolithic microwave integrated circuit; pseudomorphic HEMT; Broadband amplifiers; Gain measurement; HEMTs; Integrated circuit technology; Loss measurement; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.242268

Filename

242268