• DocumentCode
    967455
  • Title

    Dual wavelength surface emitting InGaAsP l.e.d.s

  • Author

    Lee, T.P. ; Burrus, C.A. ; Dentai, A.G.

  • Author_Institution
    Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    16
  • Issue
    22
  • fYear
    1980
  • Firstpage
    845
  • Lastpage
    846
  • Abstract
    Surface emitting l.e.d.s capable of simultaneous emission near 1.14 ¿m and 1.3 ¿m wavelengths, from an area 75 ¿m × 75 ¿m. have been fabricated and tested. Outputs of 0.5 mW and 0.8 mW, respectively, were obtained at the two wavelengths in initial devices driven at 50 mA d c. The measured crosstalk was ¿23.9 dB (electrical).
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; 1.14 micron wavelength; 1.3 micron wavelength; III-V semiconductor; crosstalk; surface emitting InGaAsP LEDs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800600
  • Filename
    4245372
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967455