Integrated AlGaAs/GaAs HBT high slew-rate and wide band operational amplifier

Author

Yi, Dong ; Qingming, Zeng ; Keli, Cai ; Keqiang, Zhang

Author_Institution

Hebei Semicond. Res. Inst., China

Volume

30

Issue

10

fYear

1995

fDate

10/1/1995 12:00:00 AM

Firstpage

1131

Lastpage

1135

Abstract

We report the design, fabrication, and test results of a wide band and high slew-rate voltage-mode operational amplifier using AlGaAs/GaAs HBT´s. To select higher carbon doping concentration is more effective in reducing base resistance, and lower emitter doping concentration possess a smaller input capacitance to improve the device speed. The HBT operational amplifier has provided 500 V/μs high slew-rate, only 8 ns setting time and about 2 GHz unity-gain frequency. Common mode rejection ratio (CMRR) values of this operational amplifier are in the order of 70 dB with a small DC input voltage offset 5 mV, and the open-loop gain is about 40 dB

Keywords

III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; operational amplifiers; wideband amplifiers; 40 dB; 8 ns; AlGaAs-GaAs; C doping concentration; HBT opamp; emitter doping concentration; fabrication; high slew-rate; voltage-mode; wideband operational amplifier; Capacitance; Carbon dioxide; Doping; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Operational amplifiers; Testing; Voltage; Wideband;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.466068

Filename

466068