GaAs converter IC´s for C-band DBS receivers

Author

Yoshida, Sadayoshi ; Satoh, Kazunari ; Miya, Tatsuya ; Umemoto, Takeshi ; Hirayama, Hiromitsu ; Miyagaki, Katsunori ; Leong, Joseph

Author_Institution

Compound Semicond. Div., NEC Corp., Kawasaki, Japan

Volume

30

Issue

10

fYear

1995

fDate

10/1/1995 12:00:00 AM

Firstpage

1081

Lastpage

1087

Abstract

GaAs downconverter Monolithic Microwave Integrated Circuits (MMICs) for use in C-band direct broadcast satellite (DBS) receivers were developed. The IC consists of four (4) RF functional blocks and a dc bias block. The RF section includes a low noise amplifier, IF amplifier, mixer, and local oscillator. The dc section incorporates an internal dc bias generation circuit to compensate for device parameter fluctuations in wafer processing. The IC makes it easy to design a complete out-door converter unit with only the addition of two low noise FETs, a band pass filter, and an external dielectric resonator. This IC is realized on a small chip of only 1.1 mm×1.6 mm. The gate length of the FET is 0.5 μm. The active layers of the FETs and resistors are formed by an ion-implantation technique. This IC has a 3.0-dB noise figure and a 43-dB conversion gain at 80-mA total current consumption. To realize compact size and low cost, these ICs are offered in 12-pin QFP plastic packages

Keywords

III-V semiconductors; MMIC frequency convertors; direct broadcasting by satellite; field effect MMIC; gallium arsenide; integrated circuit noise; integrated circuit packaging; ion implantation; microwave receivers; plastic packaging; television receivers; 0.5 mum; 12-pin QFP plastic packages; 3 dB; 43 dB; 80 mA; C-band DBS receivers; GaAs; GaAs downconverter MMICs; IF amplifier; RF functional blocks; band pass filter; conversion gain; dc bias block; external dielectric resonator; gate length; internal dc bias generation circuit; ion-implantation technique; local oscillator; low noise FET; low noise amplifier; mixer; noise figure; outdoor converter unit; total current consumption; FETs; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Radio frequency; Radiofrequency amplifiers; Satellite broadcasting;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.466075

Filename

466075