Title :
Measurements of refractive-index variation with free carrier density and temperature for 1.6 ¿m GaInAsP/InP lasers
Author :
Stubkjaer, K. ; Suematsu, Yasuharu ; Asada, Minoru ; Arai, Shigehisa ; Adams, A.R.
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
The refractive-index variation with injected carrier density and temperature was measured for GaInAsP/InP b.h. lasers emitting at 1.6 ¿m. Values of dn/dN = ¿5.9 × 10¿27 m3 and dn/dT = 3 × 10¿4/°C resulted. The investigation was based on measurements of the wavelength shift of individual longitudinal modes in the spectra of the lasers.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; indium compounds; refractive index; semiconductor junction lasers; 1.6 microns; GaInAsP/InP lasers; buried heterostructure laser; injected carrier density; longitudinal modes; refractive index variation; temperature dependence; wavelength shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800638
