Title :
Channelled substrate buried heterostructure InGaAsP/InP laser emitting at 1.55 ¿m
Author :
Takahashi, Satoshi ; Saito, Hiroshi ; Iwane, G.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
An InGaAsP/InP channelled substrate buried heterostructure (c.s.b.) laser emitting at 1.55 ¿m is fabricated by channel etching and single-stage l.p.e. growth without a low temperature growth technique or antimeltback layer. The c.s.b. laser shows low threshold current at room temperature c.w. operation and stable single transverse mode operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; CW operation; III-V semiconductors; LPE; buried heterostructure InGaAsP/InP laser; channel etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800657
