4 W single-transverse mode VECSEL utilising intra-cavity diamond heat spreader

Author

Härkönen, A. ; Suomalainen, S. ; Saarinen, E. ; Orsila, L. ; Koskinen, R. ; Okhotnikov, O. ; Calvez, S. ; Dawson, M.

Author_Institution

Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland

Volume

42

Issue

12

fYear

2006

fDate

6/8/2006 12:00:00 AM

Firstpage

693

Lastpage

694

Abstract

An optically pumped semiconductor vertical external cavity surface emitting laser, with high output power and excellent beam quality operating at a wavelength near 1.05 μm, is reported. A transparent diamond heat spreader was used for thermal management of the laser. The gain structure grown by molecular beam epitaxy includes 13 compressively strained InGaAs quantum wells. Maximum output power of 4 W with diffraction-limited beam (M²≤1.15) was achieved using a 2% output coupler and incident pump power of 20 W. It is shown that power scalability is feasible with the presented laser geometry.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical pumping; quantum well lasers; surface emitting lasers; thermal management (packaging); 1.05 micron; 20 W; 4 W; InGaAs; VECSEL; diffraction-limited beam; gain structure grown; intra-cavity diamond heat spreader; laser geometry; molecular beam epitaxy; optically pumped semiconductor; power scalability; quantum wells; thermal management; vertical external cavity surface emitting laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20060462

Filename

1642480