DocumentCode
968220
Title
Ball Formation in Aluminum Ball Bonding
Author
Onuki, Jin ; Suwa, Masateru ; Iizuka, Tomio ; Okikawa, Susumu
Author_Institution
Hitachi Ltd., Ibaraki-ken, Japan
Volume
8
Issue
4
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
559
Lastpage
563
Abstract
The effects of various factors, i.e., shield gas, current density, wire polarity, and wire material, which can influence oxidation of ball surfaces were investigated. Good quality aluminum balls were found to be formed if optimum electric and shield gas conditions were employed; for example, current density
2.5 GA/m2wire polarity: cathode; shield gas: Ar+H2 . Good quality aluminum balls of 1.7 to 2.5 times the wire diameter could be formed by varying discharge time and/or current density. It was found that they could be obtained independently of the wire material. The relation between morphologies of aluminum balls and the degree Of oxidation was also investigated in order to examine the mechanism for obtaining a good quality bail. A close correlation was found between ball morphologies, i.e., eccentricity, sphericity, and constriction, and the degree of oxidation. The morphologies were significantly improved as the oxide film thickness was reduced.
2.5 GA/m2wire polarity: cathode; shield gas: Ar+HKeywords
Aluminum integrated circuit conductors; Integrated circuit bonding; Aluminum; Argon; Bonding; Cathodes; Current density; Electrodes; Gold; Morphology; Oxidation; Wire;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1985.1136524
Filename
1136524
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