• DocumentCode
    968256
  • Title

    Femtosecond optical nonlinearities of CdSe quantum dots

  • Author

    Peyghambarian, Nasser ; Fluegel, Brian ; Hulin, Danièle ; Migus, Arnold ; Joffre, Manuel ; Antonetti, André ; Koch, Stephan W. ; Lindberg, Markus

  • Author_Institution
    Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA
  • Volume
    25
  • Issue
    12
  • fYear
    1989
  • fDate
    12/1/1989 12:00:00 AM
  • Firstpage
    2516
  • Lastpage
    2522
  • Abstract
    Femtosecond differential absorption measurements of the quantum-confined transitions in CdSe microcrystallites are reported. Spectral hole burning is observed, which is accompanied by an induced absorption feature on the high-energy side. The spectral position of the burned hole depends on the excitation wavelength. For excitation on the low-energy side of the lowest quantum-confined transition, a slight shift of the hole towards the line center is observed. The hole width increases with pump intensity and the magnitude of the induced transparency saturates at the highest excitation level. The results are consistently explained by bleaching of one-pair states and induced absorption caused by the photoexcited two electron-hole pair states. It is concluded that the presence of one electron in the excited state prevents further absorption of photons at the pair-transition energy and accounts for the major portion of the bleaching of the transition
  • Keywords
    II-VI semiconductors; cadmium compounds; high-speed optical techniques; optical hole burning; optical pumping; self-induced transparency; semiconductor quantum wells; visible spectra of inorganic solids; CdSe quantum dots; II-VI semiconductor; bleaching; burned hole; burned hole shifts; differential absorption measurements; excitation level; excitation wavelength; femtosecond absorption measurements; femtosecond optical nonlinearities; hole width; induced absorption feature; induced transparency; line center; lowest quantum-confined transition; microcrystallites; one electron; one-pair states; pair-transition energy; photoexcited two electron-hole pair states; photon absorption; pump intensity; quantum-confined transitions; spectral hole burning; spectral position; transition bleaching; Absorption; Bleaching; Boundary conditions; Charge carrier processes; Excitons; Lattices; Potential well; Quantum dots; US Department of Transportation; Ultrafast optics;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.40636
  • Filename
    40636