DocumentCode
968256
Title
Femtosecond optical nonlinearities of CdSe quantum dots
Author
Peyghambarian, Nasser ; Fluegel, Brian ; Hulin, Danièle ; Migus, Arnold ; Joffre, Manuel ; Antonetti, André ; Koch, Stephan W. ; Lindberg, Markus
Author_Institution
Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA
Volume
25
Issue
12
fYear
1989
fDate
12/1/1989 12:00:00 AM
Firstpage
2516
Lastpage
2522
Abstract
Femtosecond differential absorption measurements of the quantum-confined transitions in CdSe microcrystallites are reported. Spectral hole burning is observed, which is accompanied by an induced absorption feature on the high-energy side. The spectral position of the burned hole depends on the excitation wavelength. For excitation on the low-energy side of the lowest quantum-confined transition, a slight shift of the hole towards the line center is observed. The hole width increases with pump intensity and the magnitude of the induced transparency saturates at the highest excitation level. The results are consistently explained by bleaching of one-pair states and induced absorption caused by the photoexcited two electron-hole pair states. It is concluded that the presence of one electron in the excited state prevents further absorption of photons at the pair-transition energy and accounts for the major portion of the bleaching of the transition
Keywords
II-VI semiconductors; cadmium compounds; high-speed optical techniques; optical hole burning; optical pumping; self-induced transparency; semiconductor quantum wells; visible spectra of inorganic solids; CdSe quantum dots; II-VI semiconductor; bleaching; burned hole; burned hole shifts; differential absorption measurements; excitation level; excitation wavelength; femtosecond absorption measurements; femtosecond optical nonlinearities; hole width; induced absorption feature; induced transparency; line center; lowest quantum-confined transition; microcrystallites; one electron; one-pair states; pair-transition energy; photoexcited two electron-hole pair states; photon absorption; pump intensity; quantum-confined transitions; spectral hole burning; spectral position; transition bleaching; Absorption; Bleaching; Boundary conditions; Charge carrier processes; Excitons; Lattices; Potential well; Quantum dots; US Department of Transportation; Ultrafast optics;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.40636
Filename
40636
Link To Document