Monolithically integrated GaAs-based transceiver chips for bidirectional optical data transmission

Author

Stach, M. ; Rinaldi, F. ; Chandran, M. ; Lorch, S. ; Michalzik, R.

Author_Institution

Optoelectronics Dept., Ulm Univ., Germany

Volume

42

Issue

12

fYear

2006

fDate

6/8/2006 12:00:00 AM

Firstpage

716

Lastpage

718

Abstract

The design, fabrication and test results of monolithically integrated transceiver chips consisting of GaAs metal-semiconductor-metal photodiodes and 850 nm wavelength vertical-cavity surface-emitting lasers is presented. These chips are well suited for low-cost and compact bidirectional optical interconnection at gigabit per second data rates in mobile systems and industrial or home networks employing large core size multimode fibres.

Keywords

III-V semiconductors; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; optical fibre communication; optical interconnections; photodiodes; surface emitting lasers; transceivers; 850 nm; GaAs; bidirectional optical data transmission; bidirectional optical interconnection; home networks; industrial networks; metal-semiconductor-metal photodiodes; mobile systems; monolithically integrated transceiver chips; multimode fibres; vertical-cavity surface-emitting lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20060723

Filename

1642495