• DocumentCode
    968363
  • Title

    Influence of InGaN channel thickness on electrical characteristics of AlGaN/InGaN/GaN HFETs

  • Author

    Wang, R.-L. ; Su, Y.K. ; Chen, K.-Y.

  • Author_Institution
    Dept. of Microelectron. Eng., Nat. Kaohsiung Marine Univ., Taiwan
  • Volume
    42
  • Issue
    12
  • fYear
    2006
  • fDate
    6/8/2006 12:00:00 AM
  • Firstpage
    718
  • Lastpage
    719
  • Abstract
    The electrical performance of AlGaN/InGaN/GaN heterostructure field effect transistors (HFETs) with and without an InGaN channel layer is studied. Four structures with InGaN carrier confinement layers of 0, 100, 300 and 500 Å thickness were deposited. The channel of InGaN layer was found to enhance the sheet concentration. The gate length is 1 μm. The Al0.32Ga0.68N/In0.1Ga0.9N/GaN HFET device with a 500 Å InGaN channel layer has maximum drain current (518 mA/mm) and maximum intrinsic transconductance (167 mS/mm).
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; gallium compounds; high electron mobility transistors; indium compounds; wide band gap semiconductors; 1 micron; 100 Å; 300 Å; 500 Å; Al0.32Ga0.68N-In0.1Ga0.9N-GaN; HFET device; carrier confinement layers; channel thickness influence; drain current; electrical characteristics; heterostructure field effect transistors; intrinsic transconductance; sheet concentration;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20060674
  • Filename
    1642496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968363