Transient temperature response of vertical-cavity surface-emitting semiconductor lasers

Author

Zhao, Y.G. ; McInerney, J.G.

Author_Institution

Dept. of Phys., Peking Univ., Beijing, China

Volume

31

Issue

9

fYear

1995

fDate

9/1/1995 12:00:00 AM

Firstpage

1668

Lastpage

1673

Abstract

Transient temperature rises in vertical-cavity surface-emitting semiconductor lasers (VCSEL´s) have been calculated using Green´s function methods. The influence of current spreading, material parameters, and operating conditions on the transient thermal response have been investigated. The results show that current spreading plays an important role in the transient thermal properties of VCSEL´s; under pulsed operation the temperature profile in the active layer changes with time up to a delay of several microseconds. The calculated results are in good agreement with the measured data

Keywords

Green´s function methods; III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; Green´s function methods; In_0.2Ga_0.8As-GaAs; active layer; current spreading; material parameters; operating conditions; pulsed operation; temperature profile; transient temperature response; transient thermal properties; transient thermal response; vertical-cavity surface-emitting semiconductor lasers; Distributed Bragg reflectors; Heating; Laser modes; Optical surface waves; Power lasers; Response surface methodology; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.406381

Filename

406381