Enhanced interband-resonant light modulation by intersubband-resonant light in selectively n-doped quantum wells

Author

Noda, Susumu ; Ohya, Masaki ; Muromoto, Yoshitaka ; Asano, Takashi ; Sasaki, Akio

Author_Institution

Dept. of Electr. Eng., Kyoto Univ., Japan

Volume

31

Issue

9

fYear

1995

fDate

9/1/1995 12:00:00 AM

Firstpage

1683

Lastpage

1690

Abstract

The interband-resonant light modulation by the intersubband-resonant light in selectively n-doped quantum wells is investigated. The modulation efficiency depends greatly on the degree of nonlinear optical coupling between the interband and intersubband-resonant lights. It is shown theoretically and experimentally that the selective n-doping in the barrier layers of the quantum wells is very effective to increase the nonlinear coupling degree and thus the modulation efficiency. The thermal and the hot carrier effects on the modulation are also discussed

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; nonlinear optics; optical couplers; optical modulation; semiconductor quantum wells; Al_0.3Ga_0.7As-GaAs; AlGaAs-GaAs; barrier layers; hot carrier effects; interband-resonant light modulation; intersubband-resonant light; modulation efficiency; nonlinear coupling degree; nonlinear optical coupling; selectively n-doped quantum wells; thermal effects; Absorption; Fiber lasers; Fiber nonlinear optics; Hot carrier effects; Laser transitions; Nonlinear optics; Optical coupling; Optical modulation; Quantum mechanics; Resonance;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.406383

Filename

406383