Fabrication and characterization of S-N-S planar microbridges

We have investigated the potential of the planar S-N-S geometry for a high-TcJosephson device technology, developed fabrication techniques compatible with integrated processing and dealt with the problems of processing high-Tcmaterials with their sensitivity to impurities and damage. We have used both Nb3Sn and Nb for the banks and Cu for the normal bridge. Device with a normal link less than 1 micron long exhibit Josephson effects over a wide temperature range 0 < T < Tcsns. We discuss the electrical properties of these bridges and evaluate the potential of this geometry for high resistance (Rn= 1 - 10Ω) devices. The I-V characteristics are compared to the predictions of a simple TDGL model.