DocumentCode
968529
Title
Reciprocity failure in novolak/diazoquinone photoresist with 364-nm exposure
Author
Sheats, James R.
Author_Institution
Hewlett-Packard Co., Palo Alto, CA, USA
Volume
35
Issue
1
fYear
1988
fDate
1/1/1988 12:00:00 AM
Firstpage
129
Lastpage
131
Abstract
Intensity-independent photobleaching (reciprocity failure) was observed when a film of novolak/diazoquinone photoresist was exposed at 364 and 351 nm in the intensity range 1 to 400 mW/cm2. It was found that a dark reaction can be observed for short times after turning off the light during a bleach. It is postulated that these effects are a result of the absorbance of the intermediate ketene, which may decay on the same time scale as the exposure time and hence introduce a nonphotochemical time-dependent bleaching that couples with the photochemical bleaching to give reciprocity failure. The magnitude of the reciprocity failure is sufficient to have a significant detrimental effect on resolution and process control. Thus it is important not only to reduce the absorbance of the final product but also that of the intermediates
Keywords
failure analysis; optical saturable absorption; photoresists; polymers; semiconductor technology; 351 nm; 364 nm; absorbance; dark reaction; exposure time; intermediate ketene; nonphotochemical time-dependent bleaching; novolak/diazoquinone photoresist; photobleaching; photochemical bleaching; process control; reciprocity failure; resolution; Argon; Band pass filters; Bleaching; Chemistry; Lamps; Laser beams; Optical pulses; Process control; Resins; Resists;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2428
Filename
2428
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