DocumentCode
968606
Title
Theory of switching in polysilicon-n-p+ silicon structures
Author
Board, K. ; Darwish, M.
Author_Institution
University College of Swansea, Department of Electrical & Electronic Engineering, Swansea, UK
Volume
17
Issue
1
fYear
1981
Firstpage
41
Lastpage
42
Abstract
A simple theory is proposed for observed switching in polysilicon-n-p+ devices using a single grain for the polysilicon layer. The switching mechanism is similar to that in the tunnel oxide device but differs in that the conduction mechanism in the polysilicon is by thermionic emission rather than tunnelling. Alternative implementations are suggested using ion implantation, or molecular beam epitaxial gallium arsenide.
Keywords
electrical conductivity transitions; elemental semiconductors; p-n homojunctions; semiconductor device models; semiconductor switches; silicon; GaAs; MBE; elemental semiconductors; ion implantation; model; poly Si-n-p+ devices; switching mechanism; thermionic emission;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810030
Filename
4245490
Link To Document