Time-resolved study of silicon surface recombination

Author

Bokor, Jeffrey ; Halas, N.J.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

25

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2550

Lastpage

2555

Abstract

The technique of two-photon time- and angle-resolved photoemission spectroscopy was used to observe the dynamics of surface-state populations directly as photoexcited bulk carriers recombine on a semiconductor surface with a well-known electronic structure. The surface chosen for this study is the clean, cleaved Si(111)2×1 surface. These observations were used to construct a detailed and comprehensive model for electron-hole recombination on this surface which incorporates and is consistent with all previously obtained data on its electronic structure and dynamics. Transient surface charging effects which occur as the surface-state populations evolve were found to influence strongly the flow of bulk carriers toward the surface and were included in the model self-consistently

Keywords

electron-hole recombination; elemental semiconductors; silicon; surface conductivity; time resolved spectra; two-photon spectra; ultraviolet photoelectron spectra; Si; Si (111) 2×1 surface; angle-resolved photoemission spectroscopy; bulk carrier flow; bulk carrier recombination; bulk carriers; electron-hole recombination; electronic structure; photoexcited bulk carriers; semiconductor surface; silicon surface recombination; surface electronic dynamics; surface-state populations; time-resolved spectroscopy; transient surface charging effects; two-photon spectroscopy; well-known electronic structure; Electron traps; Photoelectricity; Photonic band gap; Radiative recombination; Silicon; Spectroscopy; Spontaneous emission; Surface charging; Surface cleaning; Surface treatment;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.40641

Filename

40641