• DocumentCode
    968719
  • Title

    Deep level spectroscopy in InP:Fe

  • Author

    Bremond, G. ; Nouailhat, A. ; Guillot, G. ; Cockayne, B.

  • Author_Institution
    Institut National des Sciences Appliquées de Lyon 20, Laboratoire de Physique de la Matiÿre, Villeurbanne, France
  • Volume
    17
  • Issue
    1
  • fYear
    1981
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    The characteristics of a single electron trap related to the iron deep level acceptor have been determined for the first time by DLTS techniques in indium phosphide. An activation energy of 0.63 eV and a capture cross-section of 3.5×10¿14 cm2 have been measured. The presence of this trap in nominally undoped samples shows that iron can be an important residual impurity in InP.
  • Keywords
    III-V semiconductors; deep level transient spectroscopy; electron traps; indium compounds; iron; DLTS techniques; III-V semiconductors; InP:Fe; activation energy; capture cross section; deep level acceptor; electron trap;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810040
  • Filename
    4245500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968719