Charge control, DC, and RF performance of a 0.35-μm pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor

Author

Nguyen, Loi D. ; Schaff, William J. ; Tasker, Paul J. ; Lepore, Allen N. ; Palmateer, Lauren F. ; Foisy, Mark C. ; Eastman, Lester F.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

35

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

139

Lastpage

144

Abstract

The authors describe a study of charge control in conjunction with DC and RF performance of 0.35-μm-gate-length pseudomorphic AlGaAs/InGaAs MODFETs. Using C-V measurements, they estimate that a two-dimensional electron gas (2DEG) with density as high as 1.0×10¹² cm^-2 can be accumulated in the InGaAs channel at 77 K before the gate begins to modulate parasitic charges in the AlGaAs. This improvement in charge control of about 10-30% over a typical AlGaAs/GaAs MODFET may partially be responsible for the superior DC and RF performance of the AlGaAs/InGaAs MODFET. At room temperature, the devices give a maximum DC voltage gain g _m/g_d of 32 and a current gain cutoff frequency f_T of 46 GHz. These results are state of the art for MODFETs of similar gate length

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.35 micron; 46 GHz; AlGaAs-InGaAs; C-V measurements; DC voltage gain; RF performance; charge control; current gain cutoff frequency; gate length; modulation-doped field-effect transistor; parasitic charges; pseudomorphic MODFET; two-dimensional electron gas; Current measurement; Density measurement; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Radio frequency; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2432

Filename

2432