• DocumentCode
    969645
  • Title

    GaAs microwave power FET with polyimide overlay interconnection

  • Author

    Turner, Brough ; Barr, W.P. ; Cooper, D.P. ; Taylor, Daniel J.

  • Author_Institution
    RSRE MOD(PE), Malvern, UK
  • Volume
    17
  • Issue
    5
  • fYear
    1981
  • Firstpage
    185
  • Lastpage
    187
  • Abstract
    An overlay interconnection technology has been developed for GaAs microwave power FETs, using polyimide as an insulator. An output power of 1017 mW at 4.3 dB gain was achieved at 8 GHz with 27° power added efficiency from a device with a gate width of 1.2 mm. Comparison with devices without overlay interconnection and having a narrower gate width revealed no evidence for degradation in device performance attributable to the interconnection technology.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; 8 GHz; GaAs microwave power FETs; III-V semiconductors; polyimide overlay interconnection;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810131
  • Filename
    4245595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969645