• DocumentCode
    969989
  • Title

    Temperature dependence of electron saturation velocity in GaAs

  • Author

    Allam, R. ; Pribetich, J.

  • Author_Institution
    CNRS, Univ. des Sci. & Techniques de Lille, Villeneuve d´Ascq, France
  • Volume
    26
  • Issue
    11
  • fYear
    1990
  • fDate
    5/24/1990 12:00:00 AM
  • Firstpage
    688
  • Lastpage
    689
  • Abstract
    Electron saturation velocity is determined from the space charge resistance Rc and microwave impedance Zd of GaAs IMPATT diodes under linear conditions. Comparison between experimental measurement and theory is used in a large frequency bandwidth (2-18 GHz) at different temperatures (T\n\n\t\t
  • Keywords
    III-V semiconductors; IMPATT diodes; carrier mobility; gallium arsenide; 2 to 18 GHz; 300 to 500 K; GaAs; GaAs IMPATT diodes; electron saturation velocity; experimental measurement; frequency bandwidth; linear conditions; microwave impedance; semiconductors; space charge resistance; temperature dependence; theory;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900449
  • Filename
    106018
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969989