Title :
Variation of Resistivity with Temperature for Thin Bismuth Films on BeO Substrates
Author :
Block, W. ; Gaddy, O.
Author_Institution :
Univ. of Illinois, IL
fDate :
6/1/1973 12:00:00 AM
Abstract :
The variation of resistivity with temperature for thin polycrystalline films of bismuth on BeO substrates is reported. Resistivity minima at temperatures of 90-150°C were observed for films of thickness 0.08-1.0 microns. Experimental results are compared with the theory relating the decrease of the mean free path by grain boundary scattering to the decrease in sample size.
Keywords :
Bismuth thin films; Bolometers; Thin-film infrared detectors; Bismuth; Chemical vapor deposition; Grain boundaries; Infrared detectors; Piezoelectric films; Substrates; Temperature; Thermal conductivity; Thickness control; Transistors;
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
DOI :
10.1109/TPHP.1973.1136720
