• DocumentCode
    970360
  • Title

    Pressure measurement by GaAs piezoelectric sensors

  • Author

    Fricke, K. ; Hartnagel, H.-L.

  • Author_Institution
    Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, West Germany
  • Volume
    26
  • Issue
    11
  • fYear
    1990
  • fDate
    5/24/1990 12:00:00 AM
  • Firstpage
    693
  • Lastpage
    694
  • Abstract
    A new pressure sensor for pressures up to 100 bar and temperatures of about 200 degrees C is presented. It uses the piezoelectric effect of 111 oriented semi-insulating GaAs. This material allows the monolithic integration of sensor and electronic circuit.
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; piezoelectric transducers; pressure transducers; 0 to 100 bar; 0 to 200 C; GaAs piezoelectric sensors; monolithic integration; monolithic sensor with electronics; piezoelectric effect; pressure sensor; pressures; semiconductors; semiinsulating GaAs; temperatures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900452
  • Filename
    106021