Title :
Performance of integrated dynamic MOS amplifiers
Author :
Hosticka, B.J. ; Hoefflinger, B. ; Herbst, D.
Author_Institution :
Universitÿt Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Dortmund, West Germany
Abstract :
The letter presents measured data of two different types of dynamic amplifier which have been integrated in a standard CMOS metal gate technology. For a supply voltage of ±5 V, gains of 70 dB were obtained with a power dissipation of 58 ¿W and 500 ¿W at clock frequencies of 10 kHz and 100 kHz, respectively. The dynamic range exceeds 100 dB.
Keywords :
amplifiers; field effect integrated circuits; linear integrated circuits; 10 kHz; 100 kHz; CMOS metal gate technology; clock frequencies; integrated dynamic MOS amplifiers; power dissipation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810209
