• DocumentCode
    970478
  • Title

    Reliability studies of 0.85 mu m vertical cavity surface emitting lasers: 50000 h MTTF at 25 degrees C

  • Author

    Wu, C.C. ; Tai, K. ; Huang, K.F.

  • Author_Institution
    Inst. of Electron., Nat. Chiao Tung Univ, Hsinchu, Taiwan
  • Volume
    29
  • Issue
    22
  • fYear
    1993
  • Firstpage
    1953
  • Lastpage
    1954
  • Abstract
    Reliability studies of gain-guided 0.85 mu m GaAs/AlGaAs quantum well surface emitting lasers were performed on 45 randomly selected lasers operated at 25, 50 or 90 degrees C with biased currents up to 15 mA (about four times the threshold values). At 25 degrees C, no noticeable degradation was seen after 5000 h of operation. A 14% reduction of power was seen at 50 degrees C after 2700h. A faster degradation on power output was seen at 90 degrees C, though the lasers are still functional after 1000h. The mean time toward failure (MTTF) of these lasers operated at 25 degrees C and 15mA is extrapolated to be approximately 5*104h.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; life testing; optical testing; reliability; semiconductor device testing; semiconductor lasers; 0.85 mum; 1000 h; 15 mA; 25 C; 2700 h; 50 C; 5000 h; 90 C; GaAs-AlGaAs; GaAs/AlGaAs quantum well surface emitting lasers; biased currents; degradation; gain-guided; mean time toward failure; power output; randomly selected lasers; reliability studies; threshold values; vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931300
  • Filename
    244605