DocumentCode
970478
Title
Reliability studies of 0.85 mu m vertical cavity surface emitting lasers: 50000 h MTTF at 25 degrees C
Author
Wu, C.C. ; Tai, K. ; Huang, K.F.
Author_Institution
Inst. of Electron., Nat. Chiao Tung Univ, Hsinchu, Taiwan
Volume
29
Issue
22
fYear
1993
Firstpage
1953
Lastpage
1954
Abstract
Reliability studies of gain-guided 0.85 mu m GaAs/AlGaAs quantum well surface emitting lasers were performed on 45 randomly selected lasers operated at 25, 50 or 90 degrees C with biased currents up to 15 mA (about four times the threshold values). At 25 degrees C, no noticeable degradation was seen after 5000 h of operation. A 14% reduction of power was seen at 50 degrees C after 2700h. A faster degradation on power output was seen at 90 degrees C, though the lasers are still functional after 1000h. The mean time toward failure (MTTF) of these lasers operated at 25 degrees C and 15mA is extrapolated to be approximately 5*104h.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; life testing; optical testing; reliability; semiconductor device testing; semiconductor lasers; 0.85 mum; 1000 h; 15 mA; 25 C; 2700 h; 50 C; 5000 h; 90 C; GaAs-AlGaAs; GaAs/AlGaAs quantum well surface emitting lasers; biased currents; degradation; gain-guided; mean time toward failure; power output; randomly selected lasers; reliability studies; threshold values; vertical cavity surface emitting lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931300
Filename
244605
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