DocumentCode
970484
Title
High efficiency InP transferred electron device for high peak power, high mean power pulsed sources in J-band
Author
Brambley, D.R. ; Smith, D.C.
Author_Institution
Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
Volume
17
Issue
8
fYear
1981
Firstpage
307
Lastpage
308
Abstract
High efficiency indium transferred electron pulsed diodes have been shown to produce high peak powers simultaneously with moderately high mean power with DC to RF conversion efficiencies up to 22% at upper J-band frequencies. Devices have been combined in four-diode waveguide array circuits to produce powers of 40 W peak, 2 W mean simultaneously, and 64.5 W at lower duty cycle.
Keywords
Gunn diodes; III-V semiconductors; indium compounds; III-V semiconductors; InP transferred electron device; J-band; four-diode waveguide array circuits; high mean power; high peak power; microwave; pulsed diodes; pulsed sources;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810215
Filename
4245682
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