• DocumentCode
    970589
  • Title

    Performance of an improved InGaAsP ridge waveguide laser at 1.3 ¿m

  • Author

    Kaminow, I.P. ; Nahory, R.E. ; Stulz, L.W. ; DeWinter, J.C.

  • Author_Institution
    Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    17
  • Issue
    9
  • fYear
    1981
  • Firstpage
    318
  • Lastpage
    320
  • Abstract
    Single-mode, CW ridge lasers at 1.3 ¿m have been made with threshold currents as low as 125 mA at 25°C using a symmetrical wafer structure. Performance is interpreted in terms of ridge guiding and injected carrier antiguiding.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; 1.3 microns; InGaAsP; injected carrier antiguiding; ridge guiding; ridge waveguide laser; semiconductor junction laser; symmetrical wafer structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810225
  • Filename
    4245693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970589